ASI / Advanced Semiconductor, Inc.
| Bild | Teil # | Beschreibung | fabricant | Auf Lager | RFQ | |
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![Qualität [#varpname#] usine](http://www.passive-electronicparts.com/images/load_icon.gif){kind=icon}
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1N26 |
PIN-Dioden hermetisch versiegelt, DO-37, 2PIN
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MZ0912B50Y |
RF Bipolar Transistors 960-1215MHz Gain 7dB NPN
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MRF557T |
RF Bipolar Transistors RF Transistor
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UML3 |
RF Bipolar Transistors 225-400MHz Pout = 3W
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AGR21090EF |
RF MOSFET Transistors 2.11-2.17GHz 19Watt Gain 14.5dB
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AGR18030EF |
RF MOSFET Transistors 1.8-1.88GHz 33Watt Gain 15dB
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AGR18125EF |
RF MOSFET Transistors 1.8-1.88GHz 125Watt Gain 13.5dB
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Die in Absatz 1 genannten Anforderungen gelten nicht. |
RF MOSFET Transistors 865-960MHz 105Watt Gain 17.8dB
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AGR19180EF |
RF MOSFET Transistors 1.93-1.99GHz 38Watt Gain 14.5dB
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